Ftd02p Datasheet Link

Overview — FTD02P

The FTD02P is a power transistor commonly sold as a complementary pair with FTD01N (FTD01N + FTD02P) and used in motor-driver and power-switching sections of consumer electronics (notably some Epson printer mainboards). It’s typically packaged in TO-220 style cases and marketed as a P‑channel device (FTD02P) that pairs with an N‑channel (FTD01N) to implement half‑bridge/H‑bridge or IGBT‑style switching stages.

RDS(on)cap R sub cap D cap S open paren o n close paren end-sub ): Minimizes power loss during operation. Ftd02p Datasheet

  • Code Snippet:
    const int relayPin = 7;
    
    • VCC: Power supply input (typically 5V).
    • GND: Ground connection.
    • IN1: Control signal for Relay Channel 1.
    • IN2: Control signal for Relay Channel 2.
    • Figure 1: Forward Current Derating Curve: Shows that at ambient temperatures above 75°C, you must reduce the forward current. At 150°C, current must drop to ~0.5A. Ignoring this causes thermal runaway.
    • Figure 2: Typical Forward Voltage ( ( V_F ) ): Non-linear curve. At 0.1A, ( V_F ) ≈ 0.7V. At 1.0A, ( V_F ) = 1.0V. At surge currents (10A), ( V_F ) jumps to 1.5V.
    • Figure 3: Typical Junction Capacitance ( ( C_J ) ): At ( V_R=0V ), ( C_J ) ≈ 15pF. At ( V_R=200V ), ( C_J ) drops to ~4pF. This is important for minimizing noise in high-frequency RF circuits.
    • Figure 4: Non-Repetitive Surge Current: This shows the number of half-cycle pulses (60Hz) the diode can survive. One 8.3ms pulse = 30A. Ten pulses = ~15A.